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AUTHOR(S): R. G. Jesuwanth Sugesh, A. Sivasubramanian
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ABSTRACT Nowadays, photonic devices measuring is the investigation of interest to satisfy the development of dangerous requirements at data centres. The phase shifter (PS)performance is computed the modulator performance. In this manuscript, the plus-shaped PN junction PS is deemed. This modelis enhanced the modulation efficiency (ME)as well as decreased optical loss for higher-speed data rate (DR). To get greater efficiency of modulation, the P doped region width andthe thicknessof doped regions aredifferunder slabs. The simulation analysis of circuit-level is executed in the proposed PSacquired at travelling wave electrode (TWE) silicon Mach Zehnder modulator (SMZM). In 80 Gbps, the 12.39 dB maximal extinction ratio along 8.67×10-8 bit error rate (BER) was acquired in VπLπ of 1.05 V.cm for 3.5 mm PS length. The measured intrinsic 3 dB bandwidth denotes ~38 GHz,whereas energy per bit transmission denotes 1.71pJ/bit. More examinesare carried out to recognize the maximal communication distance using proposed PS under SMZM for the requirements of data centre. |
KEYWORDS PN junction PS, SMZM, bit error rate, silicon photonic device, data centre |
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Cite this paper R. G. Jesuwanth Sugesh, A. Sivasubramanian. (2021) Analysis of Silicon Mach Zehnder Modulator with Plus-Shaped PN Junction Phase Shifter design for Data Centre Applications. International Journal of Circuits and Electronics, 6, 41-47 |
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