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AUTHOR(S): Manash Pratim Sarma, Kandarpa Kumar Sarma
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ABSTRACT As the 5G communication technology is becoming a reality, the importance of energy harvesting to provide self-sustainability to the communication network is gaining more importance with reliable and faster data transfer capabilities. So, as achieving self-sustainability in terms of power is a significant goal, hence designing an energy harvesting system is an important aspect. The primary element of the energy harvesting system is the high frequency rectifier. But designing a rectifier at high frequency is very crucial. The main bottleneck of such a design is offered by the leakage in the CMOS device which in turn limits the percentage conversation efficiency (PCE) to be achieved at lower signal power. Also achieving a acceptable voltage and current at the output is essential. This paper presents a two stage high frequency rectifier design based on transmission gate (TG) with a current boosting mechanism for RF applications. This design achieves a maximum PCE to 90% at -2dBm in a double stage realization. This result is observed to be the highest efficiency in its class as compared to recently reported works. It performs well over a wide band of frequencies and is capable of working in commercially relevant frequency bands for mobile communication which is clearly depicted by the frequency response. Also this circuit uses optimal number of devices with total dynamic power dissipation of 4.6 μW |
KEYWORDS Energy Harvesting, Power Conversion Efficiency, Transmission Gate, CMOS, Current Booster, Radio Frequency (RF) |
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Cite this paper Manash Pratim Sarma, Kandarpa Kumar Sarma. (2019) A TG based 2-Stage High Frequency Rectifier with Current Booster Designed Using 45nm CMOS process for Low Power RF Energy Harvesting Application. International Journal of Circuits and Electronics, 4, 5-11 |
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