AUTHOR(S):

Alexandr Nikiforov, Vyacheslav Timofeev, Artur Tuktamyshev, Andrew Yakimov, Vladimir Mashanov, Anton Gutakovskii, Oleg Pchelyakov, Nataliya Baidakova

TITLE

Strained GeSiSn Nanoscale Materials Grown by MBE on Si(100)

KEYWORDS

Silicon, Germanium, Tin, MBE, Strained layers, Optical properties

ABSTRACT

The dependence of the critical thickness transition of two-dimensional growth regime to three-dimensional of temperature and composition of the GeSiSn film on Si(100) was studied. The formation of multilayer structures with pseudomorphous GeSiSn layers without relaxed buffer layers directly on Si have been investigated. A possibility of synthesizing multilayer structures by molecular beam epitaxy was shown, and the crystal lattice constants using the high-resolution transmission electron microscopy were determined. Based on multilayer GeSiSn/Si structures the p-i-n-diodes, which demonstrated the photoresponse increasing by several orders of magnitude compared to the Sn-free structures at an increase in the Sn content, were created. Nanostructures based on GeSiSn layers have demonstrated the photoluminescence at 0.7-0.85 eV.

Cite this paper

Alexandr Nikiforov, Vyacheslav Timofeev, Artur Tuktamyshev, Andrew Yakimov, Vladimir Mashanov, Anton Gutakovskii, Oleg Pchelyakov, Nataliya Baidakova. (2016) Strained GeSiSn Nanoscale Materials Grown by MBE on Si(100). International Journal of Applied Physics, 1, 57-61